STB230NH03L Datasheet, PDF (5/13 Pages) STMicroelectronics – N-channel 30V - 80A - D2PAK STripFET™ Power MOSFET

STB230NH03L
Electrical characteristics
Table 6. Switching times
Symbol
Parameter
t_d(on)
t_r
Turn-on delay time
Rise time
t_d(off)
t_f
Turn-off delay time
Fall time
Test conditions
V_DD=15V, I_D=60A,
R_G=4.7Ω, V_GS=10V
(see Figure 12)
V_DD=15V, I_D=60A,
R_G=4.7Ω, V_GS=10V
(see Figure 12)
Min. Typ. Max. Unit
11
ns
322
ns
123
ns
102
ns
Table 7. Source drain diode
Symbol
Parameter
Test conditions
I_SD ⁽¹⁾
I_SDM(2)
V_SD(3)
t_rr
Q_rr
I_RRM
t_rr
Q_rr
I_RRM
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD=40A, V_GS=0
I_SD=120A,
di/dt = 100A/µs,
V_DD=20V, Tj=25°C
(see Figure 17)
I_SD=120A,
di/dt = 100A/µs,
V_DD=20V, Tj=150°C
(see Figure 17)
1. This value is silicon limited
2. Pulse width limited by safe operating area
3. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min.
Typ.
Max. Unit
250 A
1000 A
1.3 V
42
ns
34.7
nC
1.6
A
47
ns
41.3
nC
1.8
A
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