STB230NH03L Datasheet, PDF (4/13 Pages) STMicroelectronics – N-channel 30V - 80A - D2PAK STripFET™ Power MOSFET

Electrical characteristics
2
Electrical characteristics
STB230NH03L
(T_CASE=25°C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Test conditions
V_(BR)DSS
Drain-source
breakdown voltage
I_D = 1mA, V_GS= 0
I_DSS
Zero gate voltage
V_DS = 30V,
drain current (V_GS = 0) _{VDS = 30V,Tc=125°C}
I_GSS
Gate body leakage
current (V_DS = 0)
V_GS = ±20V
V_GS(th) Gate threshold voltage V_DS= V_GS, I_D = 250µA
R_DS(on)
Static drain-source on
resistance
V_GS= 10V, I_D= 40A
Min.
30
1
Typ.
1.5
2.3
Max. Unit
V
1
µA
10 µA
±100 nA
2.5
V
3
mΩ
Table 5.
Symbol
Dynamic
Parameter
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
R_G Gate input resistance
Test conditions
V_DS =10V, f=1 MHz, V_GS=0
V_DD=15V, I_D = 60A
V_GS =10V
(see Figure 13)
f=1 MHz Gate DC Bias = 0
Test signal level = 20mV
open drain
Min.
Typ.
4700
1600
85
72
15
11
5.5
Max. Unit
pF
pF
pF
nC
nC
nC
Ω
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