STB22NS25Z_06 Datasheet, PDF (5/14 Pages) STMicroelectronics – N-channel 250V - 0.13Ω - 22A - TO-220 / D2PAK Zener-protected MESH OVERLAY™ Power MOSFET

STB22NS25Z - STP22NS25Z
Electrical characteristics
Table 6.
Symbol
Switching times
Parameter
t_d(on)
t_r
Turn-on delay time
Rise time
t_d(Voff) Turn-off- delay time
t_f
Fall time
t_r(Voff)
t_f
t_c
Off-voltage rise time
Fall time
Cross-over time
Test conditions
V_DD = 125V, I_D = 11A
R_G = 4.7Ω V_GS = 10V
(see Figure 12)
V_DD = 125V, I_D = 11 A,
R_G = 4.7Ω, V_GS = 10V
(see Figure 12)
V_clamp = 200V, I_D = 22 A,
R_G = 4.7Ω, V_GS = 10V
(see Figure 12)
Min. Typ. Max Unit
20
ns
30
ns
100
ns
78
ns
37
ns
65
ns
110
ns
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
I_SD
I_SDM ⁽¹⁾
V_SD ⁽²⁾
Source-drain current
Source-drain current (pulsed)
Forward on voltage
I_SD = 22 A, V_GS = 0
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 22 A, di/dt = 100A/µs
V_DD = 50V, T_j = 150°C
(see Figure 17)
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Min. Typ. Max. Unit
22 A
88 A
1.6 V
292
ns
3065
nC
21
A
Table 8.
Symbol
Gate-source zener diode
Parameter
Test conditions
Min Typ Max Unit
BV_GSO(1)
Gate-source breakdown
voltage
Igs=± 500µA (open drain)
20
V
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components
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