STB22NS25Z_06 Datasheet, PDF (3/14 Pages) STMicroelectronics – N-channel 250V - 0.13Ω - 22A - TO-220 / D2PAK Zener-protected MESH OVERLAY™ Power MOSFET

STB22NS25Z - STP22NS25Z
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
V_DS
V_DGR
V_GS
I_D
I_D
I_DM ⁽¹⁾
P_TOT
Drain-source voltage (V_GS = 0)
Drain-gate voltage (R_GS = 20 kΩ)
Gate- source voltage
Drain current (continuos) at T_C = 25°C
Drain current (continuos) at T_C = 100°C
Drain current (pulsed)
Total dissipation at T_C = 25°C
Derating factor
V_ESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ)
dv/dt ⁽²⁾ Peak diode recovery voltage slope
T_stg Storage temperature
T_j Max. operating junction temperature
1. Pulse width limited by safe operating area
2. I_SD < 22A, di/dt < 200A/µs, V_DD = 80% V_(BR)DSS
Table 2. Thermal data
Rthj-case Thermal resistance junction-case Max
Rthj-amb Thermal resistance junction-ambient Max
T_l
Maximum lead temperature for soldering purpose
Table 3. Avalanche Characteristics
Symbol
Parameter
Avalanche current, repetitive or not-repetitive
I_AR
(pulse width limited by T_j max)
Single pulse avalanche energy
E_{AS (starting Tj = 25°C, ID = IAR, VDD = 50V, Rg = 47Ω)}
Electrical ratings
Value
250
250
± 20
22
13.9
88
135
1.07
2500
5
–55 to 150
Unit
V
V
V
A
A
A
W
W/°C
V
V/ns
°C
0.93
°C/W
62.5
°C/W
300
°C
Max value
Unit
22
A
350
mJ
3/14