STB20NM60D Datasheet, PDF (5/13 Pages) STMicroelectronics – N-channel 600V - 0.26Ω - 20A - D2PAK FDmesh™ Power MOSFET

STB20NM60D
Electrical characteristics
Table 6. Switching times
Symbol
Parameter
Test condictions Min. Typ. Max. Unit
t_d(on)
t_r
Turn-on delay time
Rise time
t_r(Voff)
t_f
t_c
Off-voltage rise time
Fall time
Cross-over time
V_DD = 300V, I_D = 10A
R_G = 4.7Ω V_GS = 10V
(see Figure 12)
V_DD = 480 V, I_D = 20A,
R_G = 4.7Ω, V_GS = 10V
(see Figure 12)
25
ns
12
ns
8
ns
22
ns
30
ns
Table 7. Source drain diode
Symbol
Parameter
Test condictions
Min Typ. Max Unit
I_SD
I_SDM ⁽¹⁾
V_SD ⁽²⁾
Source-drain current
Source-drain current (pulsed)
Forward on voltage
I_SD = 20 A, V_GS = 0
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 20 A, T_j = 25°C
di/dt =100A/µs,V_DD=60V
(see Figure 17)
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 20 A, T_j = 150°C
di/dt =100A/µs,V_DD=60V
(see Figure 17)
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
20 A
80 A
1.5 V
240
ns
1800
nC
16
A
396
ns
2960
nC
20
A
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