STB20NM60D Datasheet, PDF (3/13 Pages) STMicroelectronics – N-channel 600V - 0.26Ω - 20A - D2PAK FDmesh™ Power MOSFET

STB20NM60D
1
Electrical ratings
Table 1.
Symbol
Absolute maximum ratings
Parameter
V_DS Drain-source voltage (V_GS = 0)
V_DGR Drain-gate voltage (R_GS = 20 kΩ)
V_GS Gate- source voltage
I_D Drain current (continuous) at T_C = 25°C
I_D Drain current (continuous) at T_C = 100°C
I_DM ⁽¹⁾ Drain current (pulsed)
P_TOT Total dissipation at T_C = 25°C
Derating factor
dv/dt ⁽²⁾ Peak diode recovery voltage slope
T_j Operating junction temperature
T_stg Storage temperature
1. Pulse width limited by safe operating area
2. I_SD < 20A, di/dt < 400A/µs, V_DD = 80%V_(BR)DSS
Table 2. Thermal resistance
Symbol
Parameter
Rthj-case Thermal resistance junction-case Max
Rthj-amb Thermal resistance junction-ambient Max
T_l
Maximum lead temperature for soldering
purpose
Table 3. Avalanche data
Symbol
Parameter
Avalanche current, repetitive or not-repetitive
I_AR
(pulse width limited by T_j max)
Single pulse avalanche energy
E_{AS (starting Tj = 25 °C, ID = IAR, VDD = 35 V)}
Electrical ratings
Value
600
600
± 30
20
12.6
80
192
1.20
20
– 65 to 150
Unit
V
V
V
A
A
A
W
W/°C
V/ns
°C
°C
Value
0.65
62.5
300
Value
10
700
Unit
°C/W
°C/W
°C
Unit
A
mJ
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