STB190NF04_06 Datasheet, PDF (5/16 Pages) STMicroelectronics – N-channel 40V - 0.0039ohm - 120A - D2PAK/I2PAK/TO-220 STripFET TM III Power MOSFET

STP190NF04 - STB190NF04 - STB190NF04-1
Electrical characteristics
Table 5. Source drain diode
Symbol
Parameter
Test conditions
I_SD
I_SDM ⁽¹⁾
V_SD ⁽²⁾
t_rr
Q_rr
I_RRM
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
I_SD = 120A, V_GS = 0
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 190A,
di/dt = 100A/µs,
V_DD = 34V, T_j = 150°C
(see Figure 17)
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Min. Typ. Max. Unit
120 A
480 A
1.3 V
90
ns
295
nC
6.5
A
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