STB190NF04_06 Datasheet, PDF (3/16 Pages) STMicroelectronics – N-channel 40V - 0.0039ohm - 120A - D2PAK/I2PAK/TO-220 STripFET TM III Power MOSFET

STP190NF04 - STB190NF04 - STB190NF04-1
1
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
V_DS
V_DGR
V_GS
I_D(1)
I_D(1)
I_DM(2)
P_tot
dv/dt⁽³⁾
E_AS ⁽⁴⁾
T_stg
T_j
Drain-source voltage (V_GS = 0)
Drain-gate voltage (R_GS = 20 kΩ)
Gate- source voltage
Drain current (continuous) at
T_C = 25°C
Drain current (continuous) at
T_C = 100°C
Drain current (pulsed)
Total dissipation at T_C = 25°C
Derating factor
Peak diode recovery voltage slope
Single pulse avalanche energy
Storage temperature
Max. operating junction
temperature
1. Value limited by package
2. Pulse width limited by safe operating area.
3. I_SD ≤190A, di/dt ≤600A/µs, V_DD ≤V_(BR)DSS, T_j ≤T_JMAX
4. Starting T_j = 25 °C, I_D = 95A, V_DD = 35V
Value
40
40
± 20
120
120
480
310
2.07
7
860
-55 to 175
Table 2. Thermal data
Rthj-case Thermal resistance junction-case max
0.48
Rthj-amb Thermal resistance junction-ambient max
50
T_J
Maximum lead temperature for soldering purpose⁽¹⁾
300
1. for 10 sec. 1.6mm from case
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
°C
°C/W
°C/W
°C
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