STB185N55 Datasheet, PDF (5/12 Pages) STMicroelectronics – N-channel 55V - 2.9mohm - 120A - D2PAK/TO-220

STB185N55 - STP185N55
Electrical characteristics
Table 5. Source drain diode
Symbol
Parameter
Test conditions
I_SD
I_SDM(1)
Source-drain current
Source-drain current
(pulsed)
V_SD(2) Forward on voltage
I_SD=120A, V_GS=0
t_rr
Q_rr
I_RRM
Reverse recovery time I_SD=120A, V_DD= 30V
Reverse recovery charge _{di/dt = 100A/µs, Tj=150°C}
Reverse recovery current (see Figure 6)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Min.
Typ. Max. Unit
120 A
480 A
1.5 V
Tbd
ns
Tbd
nC
Tbd
A
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