STB185N55 Datasheet, PDF (1/12 Pages) STMicroelectronics – N-channel 55V - 2.9mohm - 120A - D2PAK/TO-220

General features
STB185N55
STP185N55
N-channel 55V - 2.9mΩ - 120A - D²PAK/TO-220
MDmesh™ low voltage Power MOSFET
TARGET SPECIFICATION
Type
STB185N55
STP185N55
V_DSS
55V
55V
1. Value limited by wire bonding
■ Ultra low on-resistance
■ 100% avalanche tested
R_DS(on)
3.5mΩ
3.8mΩ
I_D
120A⁽¹⁾
120A⁽¹⁾
Description
This n-channel enhancement mode Power
MOSFET is the latest refinement of
STMicroelectronic unique “single feature size™“
strip-based process with less critical aligment
steps and therefore a remarkable manufacturing
reproducibility. The resulting transistor shows
extremely high packing density for low on-
resistance, rugged avalanche characteristics and
low gate charge.
Applications
■ Switching application
– Automotive
3
2
1
TO-220
3
1
D²PAK
Internal schematic diagram
Order codes
Part number
STB185N55
STP185N55
Marking
B185N55
P185N55
Package
D²PAK
TO-220
Packaging
Tape & reel
Tube
August 2006
Rev 3
This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice.
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