STB141NF55 Datasheet, PDF (5/15 Pages) STMicroelectronics – N-channel 55V - 0.0065Ω - 80A - D2PAK - I2PAK - TO-220 STripFET™ II Power MOSFET

STB141NF55 - STB141NF55-1 - STP141NF55
Electrical characteristics
Table 5. Switching times
Symbol
Parameter
t_d(on)
t_r
Turn-on delay time
Rise time
t_d(off)
t_f
Turn-off-delay time
Fall time
Test conditions
V_DD = 27.5 V, I_D = 40A
R_G = 4.7Ω , V_GS = 10V
(see Figure 13)
V_DD = 27.5V, I_D = 40A,
R_G = 4.7Ω, V_GS = 10V
(see Figure 13)
Min. Typ. Max. Unit
30
ns
150
ns
125
ns
45
ns
Table 6. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
I_SD
I_SDM ⁽¹⁾
V_SD ⁽²⁾
Source-drain current
Source-drain current (pulsed)
Forward on voltage
I_SD = 80A, V_GS = 0
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 80A, di/dt = 100 A/µs,
V_DD = 20V, T_j = 150°C
(see Figure 15)
1. Pulse width limited safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
80 A
320 A
1.5 V
90
ns
275
nC
6.5
A
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