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| STB141NF55 Datasheet, PDF (4/15 Pages) STMicroelectronics – N-channel 55V - 0.0065Ω - 80A - D2PAK - I2PAK - TO-220 STripFET™ II Power MOSFET | |||
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Electrical characteristics
STB141NF55 - STB141NF55-1 - STP141NF55
2
Electrical characteristics
(TCASE = 25°C unless otherwise specified)
Table 3. On/off states
Symbol
Parameter
Drain-source
V(BR)DSS breakdown voltage
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage
drain current (VGS = 0)
Gate-body leakage
current (VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
Min. Typ. Max. Unit
ID = 250 µA, VGS = 0
55
V
VDS = Max rating
VDS = Max rating, TC = 125 °C
1 µA
10 µA
VGS = ±20V
±100 nA
VDS = VGS, ID = 250µA
2
3
4V
VGS = 10 V, ID = 40 A
0.0065 0.008 â¦
Table 4. Dynamic
Symbol
Parameter
Test conditions
gfs (1)
Ciss
Coss
Crss
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 15V, ID= 40 A
VDS = 25V, f = 1 MHz
VGS = 0
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD = 44V, ID= 80A
VGS =10V
(see Figure 14)
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Min. Typ. Max. Unit
100
S
5300
pF
1000
pF
290
pF
142
nC
27
nC
55
nC
4/15
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