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| STB13N80K5 Datasheet, PDF (5/20 Pages) STMicroelectronics – N-channel 800 V, 0.37, 12 A Zener-protected SuperMESH 5 Power MOSFET in D²PAK, TO-220FP and TO-220 packages | |||
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STB13N80K5, STF13N80K5, STP13N80K5
Electrical characteristics
Table 6. Switching times
Symbol
Parameter
Test conditions
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 400 V, ID = 6A,
RG=4.7 Ω, VGS=10 V
(see Figure 22)
Min. Typ. Max. Unit
-
16
-
ns
-
16
-
ns
-
42
-
ns
-
16
-
ns
Table 7. Source drain diode
Symbol
Parameter
Test conditions
ISD Source-drain current
ISDM
VSD(1)
Source-drain current (pulsed)
Forward on voltage
ISD= 12 A, VGS=0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 12 A, VDD= 60 V
di/dt = 100 A/µs,
(see Figure 21)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 12 A,VDD= 60 V
di/dt=100 A/µs,
Tj=150 °C
(see Figure 21)
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Min. Typ. Max. Unit
-
14 A
-
56 A
-
1.5 V
- 406
ns
- 5.7
µC
- 28
A
- 600
ns
- 7.9
µC
- 26
A
Table 8. Gate-source Zener diode
Symbol
Parameter
Test conditions
Min. Typ. Max Unit
V(BR)GSO Gate-source breakdown voltage IGS= ± 1mA, ID= 0
30 -
-
V
The built-in back-to-back Zener diodes have been specifically designed to enhance not only
the deviceâs ESD capability, but also to make them capable of safely absorbing any voltage
transients that may occasionally be applied from gate to source. In this respect, the Zener
voltage is appropriate to achieve efficient and cost-effective protection of device integrity.
The integrated Zener diodes thus eliminate the need for external components.
DocID024348 Rev 3
5/20
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