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STB13N80K5 Datasheet, PDF (4/20 Pages) STMicroelectronics – N-channel 800 V, 0.37, 12 A Zener-protected SuperMESH 5 Power MOSFET in D²PAK, TO-220FP and TO-220 packages
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Electrical characteristics
STB13N80K5, STF13N80K5, STP13N80K5
2
Electrical characteristics
(TCASE = 25 °C unless otherwise specified).
Symbol
Parameter
Table 4. On/off states
Test conditions
V(BR)DSS
Drain-source breakdown
voltage (VGS= 0)
IDSS
Zero gate voltage drain
current (VGS = 0)
IGSS
Gate body leakage current
(VDS = 0)
VGS(th) Gate threshold voltage
RDS(on)
Static drain-source on-
resistance
ID = 1 mA
VDS = 800 V
VDS = 800 V, Tc=125 °C
VGS = ± 20 V
VDS = VGS, ID = 100 µA
VGS = 10 V, ID= 6 A
Min. Typ. Max. Unit
800
V
1 µA
50 µA
±10 µA
3
4
5
V
0.37 0.45 Ω
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
- 870 - pF
VDS =100 V, f=1 MHz, VGS=0 -
50
-
pF
-
2
- pF
Co(tr)(1)
Co(er)(2)
Equivalent capacitance time
related
Equivalent capacitance
energy related
VGS = 0, VDS = 0 to 640 V
- 110 - pF
-
43
-
pF
RG Intrinsic gate resistance
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
f = 1MHz, ID=0
VDD = 640 V, ID = 12 A
VGS =10 V
(see Figure 20)
-
5
-
Ω
-
29
-
nC
-
7
nC
- 18
nC
1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when
VDS increases from 0 to 80% VDSS
2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss
when VDS increases from 0 to 80% VDSS
4/20
DocID024348 Rev 3
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