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STB12NM50N Datasheet, PDF (5/18 Pages) STMicroelectronics – N-channel 500V - 0.29Ω - 11A - TO-220 /FP- D2PAK - DPAK Second generation MDmesh™ Power MOSFET
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STB12NM50N - STD12NM50N - STF12NM50N - STP12NM50N
Electrical characteristics
Table 6. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD=250 V, ID= 5.5A,
RG=4.7Ω, VGS=10V
(see Figure 15)
Min Typ. Max Unit
15
ns
15
ns
60
ns
14
ns
Table 7. Source drain diode
Symbol
Parameter
Test conditions
ISD Source-drain current
ISDM(1) Source-drain current (pulsed)
VSD(2) Forward on voltage
ISD=11A, VGS=0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=11A,
di/dt = 100A/µs,
VDD=100V, Tj=25°C
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=11A,
di/dt = 100A/µs,
VDD=100V, Tj=150°C
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min Typ. Max Unit
11 A
44 A
1.3 V
340
ns
3.5
µC
20
A
420
ns
4
µC
20
A
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