STB12NM50N Datasheet, PDF (1/18 Pages) STMicroelectronics – N-channel 500V - 0.29Ω - 11A - TO-220 /FP- D2PAK - DPAK Second generation MDmesh™ Power MOSFET

STB12NM50N - STD12NM50N
STF12NM50N - STP12NM50N
N-channel 500V - 0.29Ω - 11A - TO-220 /FP- D²PAK - DPAK
Second generation MDmesh™ Power MOSFET
General features
Type
STB12NM50N
STD12NM50N
STF12NM50N
STP12NM50N
V_DSS
(@Tjmax)
550V
550V
550V
550V
R_DS(on)
<0.38Ω
<0.38Ω
<0.38Ω
<0.38Ω
I_D
11A
11A
11A ⁽¹⁾
11A
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistancel
Description
This series of devices is realized with the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters
Applications
■ Switching application
3
2
1
TO-220
3
1
DPAK
3
1
D²PAK
3
2
1
TO-220FP
Internal schematic diagram
Order codes
Part number
STB12NM50N
STD12NM50N
STF12NM50N
STP12NM50N
Marking
B12NM50N
D12NM50N
F12NM50N
P12NM50N
Package
D²PAK
DPAK
TO-220FP
TO-220
Packaging
Tape & reel
Tape & reel
Tube
Tube
November 2006
Rev 7
1/18
www.st.com
18