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| STB11NK40Z_07 Datasheet, PDF (5/16 Pages) STMicroelectronics – N-channel 400V - 0.49Ω - 9A TO-220 - TO-220FP - D2PAK Zener-protected SuperMESHTM Power MOSFET | |||
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STB11NK40Z - STP11NK40ZFP - STP11NK40Z
Electrical characteristics
Table 6. Switching times
Symbol
Parameter
td(on)
tr
Turn-on Delay Time
Rise Time
td(off)
tf
Turn-off Delay Time
Fall Time
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
Test conditions
VDD=200 V, ID=4.5A,
RG=4.7â¦, VGS=10V
(see Figure 19)
VDD=200V, ID=4.5A,
RG=4.7â¦, VGS=10V
(see Figure 19)
VDD=320V, ID=9A,
RG=4.7â¦, VGS=10V
(see Figure 19)
Min. Typ. Max. Unit
20
ns
20
ns
40
ns
18
ns
15
ns
17
ns
30
ns
Table 7. Source drain diode
Symbol
Parameter
Test conditions
ISD Source-drain current
ISDM(1) Source-drain current (pulsed)
VSD(2) Forward on voltage
ISD=9A, VGS=0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=9A,
di/dt = 100A/µs,
VDD=45V, Tj=150°C
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min Typ. Max Unit
9
A
36 A
1.6 V
225
ns
1.6
µC
14
A
Table 8. Gate-source zener diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
BVGSO(1) Gate-source breakdown voltage Igs=±1mA
30
V
(open drain)
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the deviceâs
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the deviceâs integrity. These integrated Zener diodes thus avoid the
usage of external components.
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