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| STB11NK40Z_07 Datasheet, PDF (4/16 Pages) STMicroelectronics – N-channel 400V - 0.49Ω - 9A TO-220 - TO-220FP - D2PAK Zener-protected SuperMESHTM Power MOSFET | |||
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Electrical characteristics
STB11NK40Z - STP11NK40ZFP - STP11NK40Z
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown
voltage
IDSS
Zero gate voltage drain
current (VGS = 0)
IGSS
VGS(th)
RDS(on)
Gate body leakage current
(VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
ID = 1mA, VGS= 0
VDS = Max rating,
VDS = Max rating @125°C
VGS = ± 20V, VDS = 0
VDS= VGS, ID = 100µA
VGS= 10V, ID= 4.5A
Min.
400
3
Typ. Max. Unit
V
1 µA
50 µA
±10 µA
3.75 4.5 V
0.49 0.55 â¦
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
gfs (1) Forward transconductance VDS =15V, ID = 4.5A
5.8
S
Ciss Input capacitance
930
pF
Coss
Crss
Output capacitance
Reverse transfer
capacitance
VDS =25V, f=1 MHz, VGS=0
140
30
pF
pF
Coss
(2)
eq .
Equivalent output
capacitance
VGS=0, VDS =0V to 320V
78
pF
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD=320V, ID = 9A
VGS =10V
(see Figure 17)
32
nC
6
nC
18.5
nC
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
inceases from 0 to 80% VDSS
4/16
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