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| STB10NK60Z_06 Datasheet, PDF (5/19 Pages) STMicroelectronics – N-channel 600V - 0.65Ω - 10A - I2/D2PAK - TO-220/FP - TO-247 Zener-protected SuperMESH™ Power MOSFET | |||
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STB10NK60Z - STB10NK60Z-1 - STP10NK60Z/FP - STW10NK60Z
2
Electrical characteristics
Electrical characteristics
(Tcase =25°C unless otherwise specified)
Table 4. On /off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown
voltage
ID = 250µA, VGS= 0
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage drain
current (VGS = 0)
Gate body leakage
current (VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
VDS = Max rating,
VDS = Max rating, Tj=125°C
VGS = ±15V, VDS = 0
VDS= VGS, ID = 250 µA
VGS= 10 V, ID= 4.5 A
Min.
600
3
Typ.
3.75
0.65
Max. Unit
V
1 µA
50 µA
±10 µA
4.5 V
0.75 â¦
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
gfs (1)
Forward
transconductance
VDS =15V, ID = 4.5A
7.8
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25V, f=1 MHz, VGS=0
1370
156
37
pF
pF
pF
Coss
(2)
eq
Equivalent ouput
capacitance
VGS=0, VDS =0V to 480V
90
pF
Qg
Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD=480V, ID = 8A
VGS =10V (see Figure 19)
50
70 nC
10
nC
25
nC
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80%
5/19
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