STB10NK60Z_06 Datasheet, PDF (4/19 Pages) STMicroelectronics – N-channel 600V - 0.65Ω - 10A - I2/D2PAK - TO-220/FP - TO-247 Zener-protected SuperMESH™ Power MOSFET

Electrical ratings
STB10NK60Z - STB10NK60Z-1 - STP10NK60Z/FP - STW10NK60Z
Table 3. Avalanche characteristics
Symbol
Parameter
I_AR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
Single pulse avalanche energy
E_{AS (starting Tj=25°C, ID=IAR, VDD= 50V)}
Repetitive avalanche energy
E_{AR (pulse width limited by Tj max)}
Max value
Unit
9
A
300
mJ
3.5
mJ
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