STB100NF04T4 Datasheet, PDF (5/20 Pages) STMicroelectronics – AEC-Q101 qualified

STB100NF04T4, STP100NF04
Symbol
Parameter
Table 6: Source drain diode
Test conditions
Electrical characteristics
Min. Typ. Max. Unit
ISD
ISDM⁽¹⁾
VSD⁽²⁾
Source-drain current
Source-drain current (pulsed)
Forward on voltage
-
-
ISD = 120 A, VGS = 0 V
-
120 A
480 A
1.3 V
tr
Reverse recovery time
td(off) Reverse recovery charge
tf
Reverse recovery current
ISD = 120 A, VDD = 20 V, -
75
-
ns
di/dt = 100 A/μs V, Tj =
150 °C
- 185 - nC
(see Figure 22: "Test
circuit for inductive load
-
5
-
A
switching and diode
recovery times")
Notes:
(1)_{Pulse width limited by safe operating area.}
(2)_{Pulsed: Pulse duration = 300 μs, duty cycle 1.5%}
DocID9969 Rev 7
5/20