STB100NF04T4 Datasheet, PDF (4/20 Pages) STMicroelectronics – AEC-Q101 qualified

Electrical characteristics
STB100NF04T4, STP100NF04
2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4: On/off states
Symbol
Parameter
Test conditions
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
Drain-source breakdown voltage
Zero gate voltage drain current
Gate body leakage current
Gate threshold voltage
Static drain-source on- resistance
ID = 250 µA, VGS = 0 V
VDS = 40 V, VGS = 0 V
VDS = 40 V, VGS = 0 V
TC = 125°C⁽¹⁾
VGS = ±20 V, VDS = 0 V
VDS = VGS, ID = 250 µA
VGS = 10 V, ID= 50 A
Min.
40
2
Typ.
4.3
Max.
1
10
±100
4
4.6
Unit
V
µA
µA
nA
V
mΩ
Notes:
(1)_{Defined by design,not subject to production test}
Symbol
Parameter
Table 5: Dynamic
Test conditions
Ciss Input capacitance
Coss Output capacitance
Crss Reverse transfer capacitance
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDS = 25 V, f = 1 MHz,
VGS = 0 V
VDD = 32 V, ID = 120 A ,
VGS = 10 V
(see Figure 21: "Test
circuit for gate charge
behavior")
td(on)
tr
td(off)
Turn-on delay time
Rise time
Turn-off delay time
tf
Fall time
VDD = 20 V, ID = 60 A ,
RG = 4.7 Ω ,VGS = 10 V
(see Figure 20: "Test
circuit for resistive load
switching times" and
Figure 25: "Switching
time waveform")
Min. Typ. Max. Unit
- 5100
pF
- 1300
pF
- 160
pF
- 110 150 nC
-
35
nC
-
70
nC
-
35
ns
- 220
ns
-
80
ns
-
50
ns
4/20
DocID9969 Rev 7