SCT30N120 Datasheet, PDF (5/13 Pages) STMicroelectronics – Low capacitance

SCT30N120
Electrical characteristics
Symbol
Table 8: Reverse SiC diode characteristics
Parameter
Test conditions
Min Typ. Max Unit
VSD Diode forward voltage
IF = 10 A, VGS = 0 V
trr
Reverse recovery time
Qrr
Reverse recovery charge
ISD = 20 A, di/dt = 100 A/µs
VDD = 800 V
IRRM Reverse recovery current
- 3.5 -
V
- 140
ns
- 140
-
nC
-
2
-
A
DocID023109 Rev 10
5/13