SCT30N120 Datasheet, PDF (4/13 Pages) STMicroelectronics – Low capacitance

Electrical characteristics
SCT30N120
2
Electrical characteristics
(TCASE = 25 °C unless otherwise specified).
Table 4: On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
IDSS
IGSS
VGS(th)
Zero gate voltage
drain current (VGS = 0 V)
Gate-body leakage
current (VDS = 0)
Gate threshold voltage
RDS(on)
Static drain-source
on- resistance
VDS = 1200 V
VDS = 1200 V, TJ = 200 °C
VGS = -10 to 22 V
VDS = VGS, ID = 1 mA
VGS = 20 V, ID = 20 A
VGS = 20 V, ID = 20 A,
TJ = 150 °C
VGS = 20 V, ID = 20 A,
TJ = 200 °C
1
50
1.8 3.5
80
90
100 µA
µA
100 nA
V
100 mΩ
mΩ
100
mΩ
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
Rg
Table 5: Dynamic
Parameter
Test conditions
Input capacitance
Output capacitance
Reverse transfer capacitance
VDS = 400 V, f = 1 MHz,
VGS = 0 V
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 800 V, ID = 20 A,
VGS = 0 to 20 V
Gate input resistance
f=1 MHz open drain
Min. Typ. Max. Unit
- 1700 -
pF
- 130
-
pF
-
25
-
pF
-
105
-
nC
-
16
-
nC
-
40
-
nC
-
5
-
Ω
Symbol
Table 6: Switching energy (inductive load)
Parameter
Test conditions
Min. Typ. Max. Unit
Eon Turn-on switching energy
Eoff Turn-off switching energy
VDD = 800 V, ID = 20 A,
RG = 6.8 Ω,
VGS = - 2 to 20 V
- 500 -
µJ
- 350 -
µJ
Eon Turn-on switching energy
Eoff Turn-off switching energy
VDD = 800 V, ID = 20 A,
RG = 6.8 Ω,
VGS = - 2 to 20 V,
TJ = 150 °C
- 500 -
µJ
- 400 -
µJ
Symbol
td(on)
tf
td(off)
tr
Parameter
Turn-on delay time
Fall time
Turn-off delay time
Rise time
Table 7: Switching times
Test conditions
VDD = 800 V, ID = 20 A,
RG = 0 Ω, VGS = 0 to 20 V
Min. Typ. Max. Unit
-
19
-
ns
-
28
-
ns
-
45
-
ns
-
20
-
ns
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