SCT20N120 Datasheet, PDF (5/13 Pages) STMicroelectronics – Very high operating temperature capability

SCT20N120
Electrical characteristics
Table 6. Switching energy (inductive load)
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
E_on Turn-on switching losses
V_DD = 800 V, I_D = 10 A
E_off
Turn-off switching losses ^RG^{= 6.8 Ω, V}GS ^{= -2/20 V}
E_on Turn-on switching losses
E_off Turn-off switching losses
V_DD = 800 V, I_D = 10 A
R_G= 6.8 Ω, V_GS = -2/20 V
T_J= 150 °C
- 160 - µJ
- 90 - µJ
- 165 - µJ
- 100 - µJ
Symbol
Parameter
t_d(on)V
t_f(V)
t_d(off)V
t_r(V)
Turn-on delay time
Fall time
Turn-off delay time
Rise time
Table 7. Switching times
Test conditions
V_DD = 800 V, I_D = 10 A,
R_G = 0 Ω, V_GS = 0/20 V
Min. Typ. Max. Unit
-
10
- ns
-
17
- ns
-
27
- ns
-
16
- ns
Table 8. Reverse SiC diode characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V_SD Diode forward voltage
I_F = 5 A, V_GS = -5 V
t_rr
Reverse recovery time
I_SD =10 A, V_GS = -5 V,
Q_rr Reverse recovery charge
V_R = 800 V,
dif/dt = 1650 A/µs
I_rrm Peak reverse recovery current
- 3.6 - V
- 15 - ns
- 75 - nC
-
8
-
A
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