SCT20N120 Datasheet, PDF (1/13 Pages) STMicroelectronics – Very high operating temperature capability

SCT20N120
Silicon carbide Power MOSFET:
20 A, 1200 V, 189 mΩ (typ., T_J=150 °C), N-channel in a HiP247™
Datasheet - production data
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HiP247™
Features
• Very tight variation of on-resistance vs.
temperature
• Slight variation of switching losses vs.
temperature
• Very high operating temperature capability
(200 °C)
• Very fast and robust intrinsic body diode
• Low capacitance
• Easy to drive
Figure 1. Internal schematic diagram
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Applications
• Solar inverters, UPS
• Motor drives
• High voltage DC-DC converters
• Switch mode power supplies
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Description
This silicon carbide Power MOSFET is produced
exploiting the advanced, innovative properties of
wide bandgap materials. This results in
unsurpassed on-resistance per unit area and very
good switching performance almost independent
of temperature. The outstanding thermal
properties of the SiC material, combined with the
device’s housing in the proprietary HiP247™
package, allows designers to use an industry-
standard outline with significantly improved
thermal capability. These features render the
device perfectly suitable for high-efficiency and
high power density applications.
Order code
SCT20N120
Table 1. Device summary
Marking
Package
SCT20N120
HiP247™
Packaging
Tube
Note:
The device meets ECOPACK standards, an environmentally-friendly grade of products
commonly referred to as “halogen-free”. See Section 4: Package mechanical data.
December 2015
This is information on a product in full production.
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