HCF4517B_02 Datasheet, PDF (5/8 Pages) STMicroelectronics – DUAL 64 STAGE STATIC SHIFT REGISTER

HCF4517B
DYNAMIC ELECTRICAL CHARACTERISTICS (T_amb = 25°C, C_L = 50pF, R_L = 200KΩ, t_r = t_f = 20 ns)
Symbol
Parameter
V_DD (V)
Test Condition
Value (*)
Unit
Min. Typ. Max.
t_PHL t_PLH Propagation Delay Time :
5
CL to Bit 16 Tap
10
15
200 400
110 220 ns
90 180
t_PLZ t_PHZ 3-State Output WE to Bit
5
t_PZL t_PZH ^{16 Tap (see note)}
10
15
t_THL t_TLH Output Transition Time
5
10
75 150
40 80 ns
30 60
100 200
50 100 ns
15
t_setup Setup Time (WRITE
5
ENABLE to CLOCK)
10
15
t_setup Setup Time (DATA to
5
CLOCK)
10
15
40 80
-100 -50
-50 -25
ns
-30 -15
-100 -50
-60 -30
ns
-30 -15
Release Time (WRITE
5
ENABLE to CLOCK)
10
50 100
25 50 ns
15
t_hold Hold Time (DATA to
5
CLOCK)
10
20 40
100 200
50 100 ns
15
t_W Minimum Clock Pulse
5
Width
10
15
f_CL Maximum Clock Input
5
Frequency
10
15
25 50
90 180
40 80 ns
25 50
3
6
6 12
MHz
8 15
t_r t_f Maximum Clock Input Rise
5
or Fall Time
10
Unlimited
µs
15
(*) Typical temperature coefficient for all V_DD value is 0.3 %/°C.
NOTE : Measured at the point of 10% change in output load of 50pF, R_L = 1KΩ to V_DD for t_PZL, t_PLZ and R_L = 1KΩ to V_SS for t_PHZ
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