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HCC4011B Datasheet, PDF (5/12 Pages) STMicroelectronics – NAND GATES
HCC/HCF4011B/12B/23B
DYNAMIC ELECTRICAL CHARACTERISTICS (Tamb = 25°C, CL = 50pF, RL = 200kΩ,
typical temperature coefficient for all VDD values is 0.3%/°C, all input rise and fall times = 20ns)
Symbol
Parameter
t PL H, tP HL Propagation Delay Time
Test Conditions
Value
V D D (V) Min. Typ. Max.
5
125 250
10
60 120
Unit
ns
15
45 90
t THL, tT L H Transition Time
5
100 200
10
50 100 ns
15
40 80
TEST CIRCUITS
Quiescent Device Current.
Noise Immunity.
Input Leakage Current.
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