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HCC4011B Datasheet, PDF (2/12 Pages) STMicroelectronics – NAND GATES
HCC/HFC4011B/12B/23B
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VDD* Supply Voltage : HC C Types
H CF Types
– 0.5 to + 20
V
– 0.5 to + 18
V
V i Input Voltage
II
DC Input Current (any one input)
– 0.5 to VDD + 0.5
V
± 10
mA
Pto t Total Power Dissipation (per package)
Dissipation per Output Transistor
for To p = Full Package-temperature Range
T o p Operating Temperature : HCC Types
H CF Types
200
mW
100
mW
– 55 to + 125
°C
– 40 to + 85
°C
T s tg Storage Temperature
– 65 to + 150
°C
Stresses above those listed under ”Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for external periods may affect device reliability.
* All voltage values are referred to VSS pin voltage.
RECOMMENDED OPERATING CONDITIONS
Symbol
VDD
VI
Top
Parameter
Supply Voltage : HC C Types
H C F Types
Input Voltage
Operating Temperature : HC C Types
H C F Types
V al ue
3 to 18
3 to 15
0 to VDD
– 55 to + 125
– 40 to + 85
Unit
V
V
V
°C
°C
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