HCC40100B Datasheet, PDF (5/13 Pages) STMicroelectronics – 32-STAGE STATIC LEFT/RIGHT SHIFT REGISTER

HCC/HCF40100B
STATIC ELECTRICAL CHARACTERISTICS (continued)
Symbol Parameter
Test Conditions
Value
V_I
V_O |I_O | V_{D D}
T _{Lo w}*
25°C
T _High*
(V) (V) (µA) (V) _{Min. Max. Min. Typ. Max. Min. Max.}
V_IH Input High
0.5/4.5 < 1 5 3.5
3.5
3.5
Voltage
1/9 < 1 10 7
7
7
1.5/13.5 < 1 15 11
11
11
V_IL Input Low
Voltage
4.5/0.5 < 1 5
1.5
9/1 < 1 10
3
1.5
1.5
3
3
13.5/1.5 < 1 15
4
4
4
I _OH Output
0/ 5 2.5
Drive
Current
HCC ^{0/ 5 4.6}
Types _{0/10 9.5}
5 –2
5 – 0.64
10 – 1.6
– 1.6 – 3.2
– 0.51 – 1
– 1.3 – 2.6
– 1.15
– 0.36
– 0.9
0/15 13.5
15 – 4.2
– 3.4 – 6.8
– 2.4
0/ 5 2.5
5 – 1.53
– 1.36 – 3.2
– 1.1
HCF ^{0/ 5 4.6}
Types _{0/10 9.5}
5 – 0.52
10 – 1.3
– 0.44 – 1
– 1.1 – 2.6
– 0.36
– 0.9
0/15 13.5
15 – 3.6
– 3.0 – 6.8
– 2.4
I _OL Output
0/ 5 0.4
Sink
Current
HCC
Types
0/10
0.5
0/15 1.5
5 0.64
0.51 1
0.36
10 1.6
1.3 2.6
0.9
15 4.2
3.4 6.8
2.4
0/ 5 0.4
HCF
Types
0/10
0.5
0/15 1.5
5 0.52
0.44 1
0.36
10 1.3
1.1 2.6
0.9
15 3.6
3.0 6.8
2.4
I _IH, I_IL Input
HCC _0/18
Leakage Types
18
± 0.1
±10^{– 5} ± 0.1
±1
Current
HCF _0/15
Types
Any Input
15
± 0.3
±10^{– 5} ± 0.3
±1
C_I Input Capacitance
Any Input
5 7.5
* TLow = – 55°C for HCC device : – 40°C for HCF device.
* THigh = + 125°C for HCC device : + 85°C for HCF device.
The Noise Margin for both ”1” and ”0” level is : 1V min. with VDD = 5V, 2V min. with VDD = 10V, 2.5 V min. with VDD = 15V.
Unit
V
V
mA
mA
µA
pF
DYNAMIC ELECTRICAL CHARACTERISTICS (T _amb = 25°C, C_L = 50pF, R_L = 200kΩ,
typical temperature coefficient for all V_DD values is 0.3%/°C, all input rise and fall time = 20ns)
Symbol
Parameter
t _PLH,
t_{P HL}
Propagation Delay Time
Clock to Shift Left/Right Output
Test Conditions
V al ue
V _{D D} (V) Min. Typ. Max.
5
360 720
10
165 330
Unit
ns
15
115 230
t _{T HL},
t_TLH
Transition Time
5
100 200
10
50 100 ns
15
40 80
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