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CD00297243 Datasheet, PDF (5/14 Pages) STMicroelectronics – Dual N-channel 30 V, 0.016 ohm typ., 11 A STripFET
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STL40DN3LLH5
Table 6. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Electrical characteristics
Test conditions
VDD=15 V, ID= 11 A,
RG=4.7 Ω, VGS=10 V
(see Figure 12)
Min. Typ. Max. Unit
4
ns
22
ns
-
-
13
ns
2.8
ns
Table 7. Source drain diode
Symbol
Parameter
Test conditions
ISD Source-drain current
ISDM(1) Source-drain current (pulsed)
VSD(2) Forward on voltage
ISD = 11 A, VGS=0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 11 A,
di/dt = 100 A/µs,
VDD=25 V, Tj=150 °C
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min. Typ. Max. Unit
-
11 A
-
44 A
-
1.1 V
16.2
ns
-
1
nC
8.1
A
Doc ID 18416 Rev 3
5/14
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