BYW51-200 Datasheet, PDF (5/9 Pages) STMicroelectronics – HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES

BYW51/F/G/FP/R-200
Fig. 9: Peak reverse recovery current versus dI_F/dt
(per diode).
Fig. 10: Dynamic parameters versus junction
temperature.
IRM(A)
50
IF=IF(av)
90% confidence
Tj=125°C
10
Qrr;IRM [Tj] / Qrr;IRM [Tj=125°C]
1.25
1.00
IRM
0.75
Qrr
0.50
dIF/dt(A/µs)
Tj(°C)
1
0.25
10
20
50
100
200
500
0
25
50
75
100 125 150
t(s) _{Fig. 11: Thermal resistance junction to ambient}
c _{versus copper surface under tab (Epoxy printed}
du ^{circuit board FR4, copper thickness: 35µm)}
ro ^{(D2PAK) .}
te ^{P Rth(j-a) (°C/W)}
le ⁸⁰
o ⁷⁰
s ₆₀
b ₅₀
O ₄₀
) ^- 30
t(s ²⁰
c ¹⁰
S(Cu) (cm²)
u ₀
Obsolete ^{Prod 0}
5 10 15 20 25 30 35 40
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