BYW51-200 Datasheet, PDF (1/9 Pages) STMicroelectronics – HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES

BYW51/F/G/FP/R-200
®
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
MAIN PRODUCT CHARACTERISTICS
I_F(AV)
V_RRM
Tj (max)
V_F (max)
trr (max)
2 x 10 A
200 V
150 °C
0.85 V
25 ns
A2
K
A1
A1
K
A2
FEATURES AND BENEFITS
) _{s SUITED FOR SMPS}
t(s ^{s VERY LOW FORWARD LOSSES}
c _{s NEGLIGIBLE SWITCHING LOSSES}
u _{s HIGH SURGE CURRENT CAPABILITY}
rod ^{s INSULATED PACKAGES (ISOWATT220AB /}
TO-220FP) :
P _{Insulation voltage = 2000 V DC}
te ^{Capacitance = 12 pF}
le _DESCRIPTION
so ^{Dual center tap rectifier suited for Switched Mode}
b Power Supplies and high frequency DC to DC
converters.
O _{Packaged in TO-220AB, ISOWATT220AB,}
- _{TO-220FP, D2PAK or I2PAK, this device is}
t(s) ^{intended for use in low voltage, high frequency}
inverters, free wheeling and polarity protection
c applications.
TO-220FPAB
BYW51FP-200
K
A2
A1
D²PAK
BYW51G-200
A2
K
A1
I²PAK
BYW51R-200
A2
K
A1
TO-220AB
BYW51-200
A2
A1 ^K
ISOWATT220AB
BYW51F-200
rodu ^{ABSOLUTE RATINGS (limiting values, per diode)}
P _Symbol
Parameter
Value
Unit
te VRRM Repetitive peak reverse voltage
200
V
le _{IF(RMS) RMS forward current}
20
A
Obso ^IF(AV)
Average forward current TO-220AB / D²PAK Tc=120°C Per diode
δ = 0.5
I²PAK
Per device
10
20
A
ISOWATT220AB Tc=95°C Per diode
10
Per device
20
TO-220FPAB
Tc=85°C _{Per diode}
10
Per device
20
I_FSM Surge non repetitive forward current
tp=10ms sinusoidal
100
A
Tstg Storage temperature range
- 65 to + 150 °C
Tj Maximum operating junction temperature
150
°C
August 2002 - Ed: 3E
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