STM8L101X1 Datasheet, PDF (49/88 Pages) STMicroelectronics – Auto-wakeup unit

STM8L101x1 STM8L101x2 STM8L101x3
Electrical parameters
Table 26. I/O static characteristics ⁽¹⁾ (continued)
Symbol
Parameter
Conditions
Min
Typ
Max
V_SS ≤V_IN ≤V_DD
Standard I/Os
-
-
50 ⁽⁵⁾
I_lkg Input leakage current ⁽⁴⁾
V_SS ≤V_IN ≤V_DD
True open drain I/Os
-
-
200⁽⁵⁾
V_SS ≤V_IN ≤V_DD
PA0 with high sink LED
-
driver capability
-
200⁽⁵⁾
R_PU
C_IO(7)
Weak pull-up equivalent resistor⁽⁶⁾
I/O pin capacitance
V_IN = V_SS
-
30
45
60
-
5
-
1. V_DD = 3.0 V, T_A = -40 to 85 °C unless otherwise specified.
2. Guaranteed by characterization results.
3. Hysteresis voltage between Schmitt trigger switching levels. Based on characterization results, not tested.
4. The max. value may be exceeded if negative current is injected on adjacent pins.
5. Not tested in production.
6. R_FiPgUurp_eu₂ll₂-u).p equivalent resistor based on a resistive transistor (corresponding I_PU current characteristics described in
7. Guaranteed by design.
Unit
nA
kΩ
pF
Figure 20. Typical V_IL and V_IH vs. V_DD (High sink I/Os)
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