NAND04GA3C2A Datasheet, PDF(46/51 Page) STMicroelectronics – 4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory

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NAND04GA3C2A Datasheet, PDF (46/51 Pages) STMicroelectronics – 4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory

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12 DC and AC parameters

NAND04GA3C2A, NAND04GW3C2A

12.1

Ready/busy signal electrical characteristics

Figure 25, Figure 26 and Figure 27 show the electrical characteristics for the Ready/Busy

signal. The value required for the resistor RP can be calculated using the following equation:

RPmin= -(--V----D-----D-----m--I--O-a----xL----â-+----V----IO--L---L----m-----a----x---)-

So,

RPmin(1.8V)= 3----m--1----A.-8----5+---V-----I--L--

RPmin(3V)= 8----m----3--A-.--2--+--V------I--L--

where IL is the sum of the input currents of all the devices tied to the Ready/Busy signal. RP

max is determined by the maximum value of tr.

Figure 25. Ready/Busy AC Waveform

ready VDD

VOL

busy

VOH

AI07564B

Figure 26. Ready/Busy Load Circuit

VDD

DEVICE

ibusy

Open Drain Output

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VSS

AI07563B

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