NAND04GA3C2A Datasheet, PDF (1/51 Pages) STMicroelectronics – 4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory

NAND04GA3C2A
NAND04GW3C2A
4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory
Features
■ High density multi-level Cell (MLC) NAND
Flash memories:
– Up to 128 Mbit spare area
– Cost effective solutions for mass storage
applications
■ NAND interface
– x8 bus width
– Multiplexed Address/ Data
■ Supply voltages
– V_DD = 2.7 to 3.6V core supply voltage for
Program, Erase and Read operations.
– V_DDQ = 1.7 to 1.95 or 2.7 to 3.6V for I/O
buffers.
■ Page size: (2048 + 64 spare) Bytes
■ Block size: (256K + 8K spare) Bytes
■ Page Read/Program
– Random access: 60µs (max)
– Sequential access: 60ns(min)
– Page Program Operation time: 800µs (typ)
■ Cache Read mode
– Internal Cache Register to improve the
read throughput
■ Fast Block Erase
– Block erase time: 1.5ms (typ)
■ Status Register
■ Electronic Signature
■ Serial Number option
Table 1. Product List
Reference
Part Number
NAND04Gx3C2A
NAND04GA3C2A
NAND04GW3C2A
TSOP48 12 x 20mm
■ Chip Enable ‘don’t care’
– for simple interface with microcontroller
■ Data Protection
– Hardware Program/Erase locked during
power transitions
■ Embedded Error Correction Code (ECC)
– Internal ECC accelerator
– Easy ECC Command Interface
■ Data integrity
– 10,000 Program/Erase cycles (with ECC)
– 10 years Data Retention
■ ECOPACK^® package available
■ Development tools
– Bad Blocks Management and Wear
Leveling algorithms
– File System OS Native reference software
– Hardware simulation models
Density
4 Gbits
November 2006
Rev 2
1/51
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