M58LR128GT Datasheet, PDF (46/84 Pages) STMicroelectronics – 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory

M58LR128GT, M58LR128GB
Table 23. Asynchronous Read AC Characteristics
Symbol
Alt
Parameter
85
t_AVAV
t_RC
Address Valid to Next Address Valid
Min
85
t_AVQV
t_ACC
Address Valid to Output Valid (Random)
Max
85
t_AVQV1
t_PAGE Address Valid to Output Valid (Page)
Max
25
t_AXQX ⁽¹⁾
t_OH
Address Transition to Output Transition
Min
0
t_ELTV
Chip Enable Low to Wait Valid
Max
14
t_ELQV ⁽²⁾
t_CE
Chip Enable Low to Output Valid
Max
85
t_ELQX ⁽¹⁾
t_LZ
Chip Enable Low to Output Transition
Min
0
t_EHTZ
Chip Enable High to Wait Hi-Z
Max
14
t_EHQX ⁽¹⁾
t_OH
Chip Enable High to Output Transition
Min
2
t_EHQZ ⁽¹⁾
t_HZ
Chip Enable High to Output Hi-Z
Max
14
t_GLQV ⁽²⁾
t_OE
Output Enable Low to Output Valid
Max
20
t_GLQX ⁽¹⁾
t_OLZ
Output Enable Low to Output Transition
Min
0
t_GLTV
Output Enable Low to Wait Valid
Max
14
t_GHQX ⁽¹⁾
t_OH
Output Enable High to Output Transition
Min
2
t_GHQZ ⁽¹⁾
t_DF
Output Enable High to Output Hi-Z
Max
14
t_GHTZ
Output Enable High to Wait Hi-Z
Max
14
t_AVLH
t_AVADVH Address Valid to Latch Enable High
Min
7
t_ELLH
t_ELADVH Chip Enable Low to Latch Enable High
Min
10
t_LHAX
t_ADVHAX Latch Enable High to Address Transition
Min
7
t_LLLH
t_ADVLADVH Latch Enable Pulse Width
Min
7
t_LLQV
t_ADVLQV Latch Enable Low to Output Valid (Random)
Max
85
Note: 1. Sampled only, not 100% tested.
2. G may be delayed by up to tELQV - tGLQV after the falling edge of E without increasing tELQV.
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
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