M58LR128GT Datasheet, PDF (1/84 Pages) STMicroelectronics – 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory

M58LR128GT
M58LR128GB
128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst)
1.8V Supply Flash Memory
FEATURES SUMMARY
■ SUPPLY VOLTAGE
– V_DD = 1.7V to 2.0V for program, erase and
read
– V_DDQ = 1.7V to 2.0V for I/O Buffers
– V_PP = 9V for fast program (12V tolerant)
■ SYNCHRONOUS / ASYNCHRONOUS READ
– Synchronous Burst Read mode: 54MHz
– Asynchronous Page Read mode
– Random Access: 85ns
■ SYNCHRONOUS BURST READ SUSPEND
■ PROGRAMMING TIME
– 10µs typical Word program time using
Buffer Enhanced Factory Program
command
■ MEMORY ORGANIZATION
– Multiple Bank Memory Array: 8 Mbit
Banks
– Parameter Blocks (Top or Bottom
location)
■ DUAL OPERATIONS
– program/erase in one Bank while read in
others
– No delay between read and write
operations
■ BLOCK LOCKING
– All blocks locked at power-up
– Any combination of blocks can be locked
with zero latency
– WP for Block Lock-Down
– Absolute Write Protection with V_PP = V_SS
■ SECURITY
– 64 bit unique device number
– 2112 bit user programmable OTP Cells
■ COMMON FLASH INTERFACE (CFI)
■ 100,000 PROGRAM/ERASE CYCLES per
BLOCK
Figure 1. Package
FBGA
VFBGA56 (ZB)
7.7 x 9mm
■ ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code,
M58LR128GT: 88C4h.
– Bottom Device Code,
M58LR128GB: 88C5h.
■ PACKAGE
– Compliant with Lead-Free Soldering
Processes
– Lead-Free Versions
June 2005
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