M58MR016C Datasheet, PDF (43/51 Pages) STMicroelectronics – 16 Mbit 1Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory

Figure 19. Block Erase Flowchart and Pseudo Code
M58MR016C, M58MR016D
Start
Write 20h
Command
Write Block Address
& D0h Command
Read Status
Register
NO
b7 = 1
YES
NO
b3 = 0
YES
NO
b4, b5 = 0
YES
NO
b5 = 0
YES
NO
b1 = 0
YES
End
NO
Suspend
YES
Suspend
Loop
VPP Invalid
Error (1)
Command
Sequence Error (1)
Erase Error (1)
Erase to Protected
Block Error (1)
EE instruction:
– write 20h command
– write Block Address (A12-A19) &
command D0h
(memory enters read status state after
the EE instruction)
do:
– read status register (E or G must be
toggled) if PES instruction given execute
suspend erase loop
while b7 = 1
If b3 = 1, VPP invalid error:
– error handler
If b4, b5 = 1, Command sequence error:
– error handler
If b5 = 1, Erase error:
– error handler
If b1 = 1, Erase to protected block error:
– error handler
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