M58MR016C Datasheet, PDF (1/51 Pages) STMicroelectronics – 16 Mbit 1Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory

M58MR016C
M58MR016D
16 Mbit (1Mb x16, Mux I/O, Dual Bank, Burst)
1.8V Supply Flash Memory
PRELIMINARY DATA
s SUPPLY VOLTAGE
– V_DD = V_DDQ = 1.7V to 2.0V for Program,
Erase and Read
– V_PP = 12V for fast Program (optional)
s MULTIPLEXED ADDRESS/DATA
s SYNCHRONOUS / ASYNCHRONOUS READ
– Burst mode Read: 40MHz
– Page mode Read (4 Words Page)
– Random Access: 100ns
s PROGRAMMING TIME
– 10µs by Word typical
– Two or four words programming option
s MEMORY BLOCKS
– Dual Bank Memory Array: 4/12 Mbit
– Parameter Blocks (Top or Bottom location)
s DUAL OPERATIONS
– Read within one Bank while Program or
Erase within the other
– No delay between Read and Write operations
s PROTECTION/SECURITY
– All Blocks protected at Power-up
– Any combination of Blocks can be protected
– 64 bit unique device identifier
– 64 bit user programmable OTP cells
– One parameter block permanently lockable
s COMMON FLASH INTERFACE (CFI)
s 100,000 PROGRAM/ERASE CYCLES per
BLOCK
s ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code, M58MR016C: 88DEh
– Bottom Device Code, M58MR016D: 88E0h
FBGA
TFBGA48 (ZC)
10 x 4 ball array
Figure 1. Logic Diagram
VDD VDDQ VPP
4
A16-A19
W
E
G
RP
WP
L
K
16
ADQ0-ADQ15
M58MR016C
M58MR016D
WAIT
BINV
VSS
AI05228
August 2002
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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