STM32F100RCT6 Datasheet, PDF (40/98 Pages) STMicroelectronics – High-density value line, advanced ARM-based 32-bit MCU with 256 to 512 KB Flash, 16 timers, ADC, DAC & 11 comm interfaces

Electrical characteristics
STM32F100xC, STM32F100xD, STM32F100xE
5.3.4
5.3.5
Embedded reference voltage
The parameters given in Table 12 are derived from tests performed under the ambient
temperature and V_DD supply voltage conditions summarized in Table 9.
Table 12. Embedded internal reference voltage
Symbol
Parameter
Conditions
Min Typ Max Unit
V_REFINT Internal reference voltage
ADC sampling time when
T_{S_vrefint(1)} reading the internal
reference voltage
–40 °C < T_A < +105 °C 1.16 1.20 1.26
V
–40 °C < T_A < +85 °C 1.16 1.20 1.24
V
5.1 _17.1⁽²⁾ µs
Internal reference voltage
V_RERINT(2) spread over the temperature
range
T_Coeff(2) Temperature coefficient
V_DD = 3 V ±10 mV
10
mV
100 ppm/°C
1. Shortest sampling time can be determined in the application by multiple iterations.
2. Guaranteed by design, not tested in production.
Supply current characteristics
The current consumption is a function of several parameters and factors such as the
operating voltage, ambient temperature, I/O pin loading, device software configuration,
operating frequencies, I/O pin switching rate, program location in memory and executed
binary code.
The current consumption is measured as described in Figure 10: Current consumption
measurement scheme.
All Run-mode current consumption measurements given in this section are performed with a
reduced code that gives a consumption equivalent to Dhrystone 2.1 code.
Maximum current consumption
The MCU is placed under the following conditions:
● All I/O pins are in input mode with a static value at V_DD or V_SS (no load)
● All peripherals are disabled except if it is explicitly mentioned
● Prefetch in on (reminder: this bit must be set before clock setting and bus prescaling)
● When the peripherals are enabled f_PCLK1 = f_HCLK/2, f_PCLK2 = f_HCLK
The parameters given in Table 13 are derived from tests performed under the ambient
temperature and V_DD supply voltage conditions summarized in Table 9.
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