X00602MA Datasheet, PDF (4/5 Pages) STMicroelectronics – 0.8A SCRs

X00602MA
Fig. 6: Relative variation of dV/dt immunity
versus gate-cathode resistance (typical values).
dV/dt[Rgk]/dV/dt[Rgk=1kΩ]
1E+2
1E+1
1E+0
Fig. 7: Relative variation of dV/dt immunity
versus gate-cathode capacitance (typical
values).
dV/dt[Cgk]/dV/dt[Rgk=1kΩ]
20
10
5
1E-1
1E-2
1E-2
Rgk(kΩ)
1E-1
1E+0
1E+1
Fig. 8: Surge peak on-state current versus
number of cycles.
ITSM(A)
10
9
8
7
Nonrepetitive
6
Tjinitial=25°C
5
4
Repetitive
Tamb=25°C
3
2
1
0
1
10
tp=10ms
Onecycle
Number of cycles
100
1000
2
Cgk(nF)
1
1
2
5
10
Fig. 9: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10 ms, and corresponding value of I²t.
ITSM(A),I ²t(A²s)
100.0
ITSM
Tj initial = 25 °C
10.0
1.0
0.1
0.01
tp(ms)
0.10
1.00
I²t
10.00
Fig. 10: On-state characteristics (maximum
values).
ITM(A)
1E+1
Tj max.:
Vto = 0.85V
Rd = 245mΩ
1E+0
Tj = Tjmax.
1E-1
Tj = 25°C
VTM(V)
1E-2
0.5 1.0 1.5 2.0 2.5 3.0 3.5
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