X00602MA Datasheet, PDF (3/5 Pages) STMicroelectronics – 0.8A SCRs

X00602MA
Fig. 1: Maximum average power dissipation
versus average on-state current.
P(W)
0.65
0.60 ^{α = 180°}
0.55
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0.0
0.1
360°
IT(av)(A)
α
0.2
0.3
0.4
0.5
0.6
Fig. 2-2: Average and D.C. on-state current
versus ambient temperature (device mounted on
FR4 with recommended pad layout).
IT(av)(A)
1.0
0.9
0.8
D.C.
0.7
0.6
α = 180°
0.5
0.4
0.3
0.2
0.1
0.0
0
25
Tamb(°C)
50
75
100
125
Fig. 4: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature.
IGT, IH, IL[Tj] / IGT, IH, IL[Tj = 25 °C]
1.6
1.4
1.2
1.0
0.8
0.6
IGT
0.4
0.2
Tj(°C)
0.0
-40 -20 0 20 40 60 80
IH & IL
100 120 140
Fig. 2-1: Average and D.C. on-state current
versus lead temperature.
IT(av)(A)
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
D.C.
α = 180°
25
Tlead( °C)
50
75
100
125
Fig. 3: Relative variation of thermal impedance
junction to ambient versus pulse duration.
K = [Zth(j-a)/Rth(j-a)]
1.00
0.10
0.01
1E-2
1E-1
tp(s)
1E+0
1E+1
1E+2 5E+2
Fig. 5: Relative variation of holding current
versus gate-cathode resistance (typical values).
IH[Rgk]/IH[Rgk=1kΩ]
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1E-2
Rgk(kΩ)
1E-1
1E+0
1E+1
1E+2
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