THBT200S Datasheet, PDF (4/7 Pages) STMicroelectronics – TRANSIENT VOLTAGE SUPPRESSOR FOR SLIC PROTECTION

THBT200S
REFERENCE TEST CIRCUIT 1 FOR IBO and VBO parameters :
t
TEST PROCEDURE :
Pulse Test duration (tp = 20ms):
- For Bidirectional devices = Switch K is closed
- For Unidirectional devices = Switch K is open.
VOUT Selection
- Device with VBO < 200 Volt
- VOUT = 250 VRMS, R1 = 140 Ω.
- Device with VBO ≥ 200 Volt
- VOUT = 480 VRMS, R2 = 240 Ω.
FUNCTIONAL HOLDING CURRENT (I_H) TEST CIRCUIT 2.
R
V_BAT = - 48 V
D.U.T.
- V_P
Surge generator
This is a GO-NOGO Test which allows to confirm the holding current (IH) level in a functional
test circuit.
TEST PROCEDURE :
1) Adjust the current level at the IH value by short circuiting the AK of the D.U.T.
2) Fire the D.U.T with a surge Current : Ipp = 10A , 10/1000 µs.
3) The D.U.T will come back off-state within 50 ms max.
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