THBT200S Datasheet, PDF (3/7 Pages) STMicroelectronics – TRANSIENT VOLTAGE SUPPRESSOR FOR SLIC PROTECTION

ELECTRICAL CHARACTERISTICS (Tamb = 25°C).
Symbol
Parameter
V_RM Stand-off voltage
IRM Leakage current at VRM
VBR Continuous reverse voltage
VBO Breakover voltage
I_H Holding current
IBO Breakover current
IPP Peak pulse current
C Capacitance
THBT200S
I
Ipp
IBO
IH
IRM
V
VRM VBR ^VBO
PARAMETERS RELATED TO ONE TRISIL (Between TIP and GND or RING and GND)
IRM @ VRM
VBR @ IR
VBO @ IBO
IH
max.
min.
max.
min.
max.
min.
note 1
note 2
µA
V
V
mA
V
mA
mA
mA
10
180
200
1
290
Note 1 :
Note 2 :
Note 3 :
See reference test circuit 1 for IBO and VBO parameters.
See test circuit 2.
VR = 1V, F = 1MHz.
150
800
150
C
max.
note 3
pF
200
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