STY112N65M5 Datasheet, PDF (4/12 Pages) STMicroelectronics – N-channel 650 V, 0.019 Ω, 96 A, MDmesh™ V Power MOSFET in Max247 package

Electrical characteristics
2
Electrical characteristics
(T_C = 25 °C unless otherwise specified)
Table 4. On /off states
Symbol
Parameter
Test conditions
V_(BR)DSS
Drain-source
breakdown voltage
I_D = 1 mA, V_GS = 0
I_DSS
I_GSS
V_GS(th)
R_DS(on)
Zero gate voltage
V_DS = 650 V
drain current (V_GS = 0) V_DS = 650 V, T_C=125 °C
Gate-body leakage
current (V_DS = 0)
V_GS = ± 25 V
Gate threshold voltage V_DS = V_GS, I_D = 250 µA
Static drain-source on
resistance
V_GS = 10 V, I_D = 48 A
STY112N65M5
Min. Typ. Max. Unit
650
V
10 µA
100 µA
±100 nA
3
4
5
V
0.019 0.022 Ω
Table 5.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max. Unit
C_iss
C_oss
C_rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V_DS = 100 V, f = 1 MHz,
V_GS = 0
16870
pF
-
365
- pF
7
pF
C_o(tr)(1)
Equivalent
capacitance time
related
V_GS = 0, V_DS = 0 to 520 V
- 1333 - pF
C_o(er)(2)
Equivalent
capacitance energy
related
V_GS = 0, V_DS = 0 to 520 V
-
350
- pF
R_G
Intrinsic gate
resistance
f = 1 MHz open drain
-
1.26
-
Ω
Q_g Total gate charge
V_DD = 520 V, I_D = 48 A,
Q_gs Gate-source charge V_GS = 10 V
Q_gd Gate-drain charge
(see Figure 15)
350
nC
-
97
- nC
118
nC
1. C_o(tr) is a constant capacitance value that gives the same charging time as C_oss while V_DS is rising from 0
to 80% V_DSS.
2. C_o(er) is a constant capacitance value that gives the same stored energy as C_oss while V_DS is rising from 0
to 80% V_DSS.
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