STY112N65M5 Datasheet, PDF (3/12 Pages) STMicroelectronics – N-channel 650 V, 0.019 Ω, 96 A, MDmesh™ V Power MOSFET in Max247 package

STY112N65M5
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
V_GS
I_D
I_D
I_DM ⁽¹⁾
P_TOT
I_AR
E_AS
dv/dt⁽²⁾
Gate- source voltage
Drain current (continuous) at T_C = 25 °C
Drain current (continuous) at T_C = 100 °C
Drain current (pulsed)
Total dissipation at T_C = 25 °C
Max current during repetitive or single pulse avalanche
(pulse width limited by T_JMAX)
Single pulse avalanche energy
(starting T_j = 25°C, I_D = I_AR, V_DD = 50V)
Peak diode recovery voltage slope
T_stg Storage temperature
T_j Max. operating junction temperature
1. Pulse width limited by safe operating area.
2. I_SD ≤ 96 A, di/dt = 400 A/µs, V_DD = 400 V, peak V_DS < V_(BR)DSS.
Table 3. Thermal data
Symbol
Parameter
R_thj-case Thermal resistance junction-case max
R_thj-amb Thermal resistance junction-ambient max
T_l Maximum lead temperature for soldering purpose
Value
± 25
96
61
384
625
17
2400
15
- 55 to 150
150
Value
0.2
30
300
Unit
V
A
A
A
W
A
mJ
V/ns
°C
°C
Unit
°C/W
°C/W
°C
Doc ID 15321 Rev 3
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