STTH302 Datasheet, PDF (4/5 Pages) STMicroelectronics – HIGH EFFICIENCY ULTRAFAST DIODE

STTH302
Fig. 7: Reverse recovery time versus dI_F/dt (90%
confidence).
Fig. 8: Peak reverse recovery current versus dI_F/dt
(90% confidence).
trr(ns)
100
90
80
70
60
50
40
30
20
10
0
1
IF=3A
VR=100V
Tj=125°C
IRM(A)
6
IF=3A
VR=100V
5
Tj=125°C
4
Tj=125°C
3
Tj=25°C
2
1
dIF/dt(A/µs)
0
10
100
1000
1
10
Tj=125°C
Tj=25°C
dIF/dt(A/µs)
100
1000
Fig. 9: Relative variations of dynamic parameters
versus junction temperature.
IRM; trr; Qrr[Tj]/IRM; trr; Qrr[Tj=25°C]
5.0
IF=3A
4.5
dIF/dt=200A/µs
VR=100V
4.0
Qrr
3.5
3.0
2.5
IRM
2.0
1.5
trr
Tj(°C)
1.0
25
50
75
100
125
150
175
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