STTH302 Datasheet, PDF (1/5 Pages) STMicroelectronics – HIGH EFFICIENCY ULTRAFAST DIODE

®
STTH302
HIGH EFFICIENCY ULTRAFAST DIODE
MAIN PRODUCT CHARACTERISTICS
I_F(AV)
V_RRM
Tj (max)
V_F (max)
trr (max)
3A
200 V
175 °C
0.75 V
35 ns
FEATURES AND BENEFITS
s Very low conduction losses
s Negligible switching losses
s Low forward and reverse recovery times
s High junction temperature
DESCRIPTION
The STTH302 which is using ST's new 200V
planar technology, is specially suited for switching
mode base drive & transistor circuits.
The device is also intended for use as a free
wheeling diode in power supplies and other power
switching applications.
DO-201AD
STTH302
ABSOLUTE RATINGS (limiting values)
Symbol
V_RRM
I_{F (AV)}
I_FSM
T_stg
Tj
Parameter
Repetitive peak reverse voltage
Average forward current
TI = 107°C
Surge non repetitive forward current t_p = 10ms
Storage temperature range
Maximum operating junction temperature
Value
200
δ = 0.5
Sinusoidal
3
130
- 65 to + 175
175
Unit
V
A
A
°C
°C
THERMAL PARAMETERS
Symbol
Rth (j-a) _{Junction-ambient*}
* On infinite heatsink with 10mm lead length.
Parameter
Value
25
Unit
°C/W
November 2001 - Ed: 1A
1/5