STTH1002C Datasheet, PDF (4/8 Pages) STMicroelectronics – HIGH EFFICIENCY ULTRAFAST DIODE

STTH1002C
Fig. 5: Reverse recovery charges versus dI_F/dt
(typical values, per diode).
Fig. 6: Reverse recovery time versus dI_F/dt
(typical values, per diode).
Qrr(nC)
240
220
200
IF=5A
VR=160V
180
160
140
120
100
80
60
40
20
0
10
Tj=125°C
dIF/dt(A/µs)
100
Tj=25°C
1000
trr(ns)
80
IF=5A
VR=160V
70
60
50
40
30
20
10
0
10
Tj=125°C
Tj=25°C
dIF/dt(A/µs)
100
1000
Fig. 7: Peak reverse recovery current versus dI_F/dt
(typical values, per diode).
Fig. 8: Dynamic parameters versus junction
temperature.
IRM(A)
13
12
IF=5A
VR=160V
11
10
9
8
7
6
5
4
3
2
1
0
10
Tj=125°C
dIF/dt(A/µs)
100
Tj=25°C
Qrr;IRM[Tj]/Qrr;IRM[Tj=125°C]
1.4
IF=5A
VR=160V
1.2
1.0
IRM
0.8
Qrr
0.6
0.4
0.2
Tj(°C)
0.0
1000
25
50
75
100
125
150
Fig. 9-1: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, e_CU: 35µm) for D²PAK.
Rth(j-a)(°C/W)
80
70
60
50
40
30
20
10
S(Cu)(cm²)
0
0
2
4
6
8
10
12
14
16
18
20
Fig. 9-2: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, e_CU: 35µm) for DPAK.
Rth(j-a)(°C/W)
100
90
80
70
60
50
40
30
20
10
S(Cu)(cm²)
0
0
2
4
6
8
10
12
14
16
18
20
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